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| CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts APPLICATION * General purpose switching and amplification * Audio power amplifier CHTA14ZPT CURRENT 1 Ampere FEATURE * * * * Small flat package. (SC-73/SOT-223) Saturation voltage VCE(sat)=1.5V(max.)(IC/IB=100mA/0.1mA) PD= 2.0W (Power Dissipation). High saturation current capability. SC-73/SOT-223 1.65+0.15 6.50+0.20 3.00+0.10 0.90+0.05 2.0+0.3 CONSTRUCTION * NPN Switching Transistor 0.70+0.10 0.70+0.10 2.30+0.1 3.5+0.2 7.0+0.3 0.9+0.2 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 1 B 2 C 3 E Dimensions in millimeters SC-73/SOT-223 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Thermal resistance junction - case point CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC RJ-C MIN. -55 -55 MAX. 30 30 10 1 62.5 2000 +150 +150 +150 UNITS Volts Volts Volts Amps O C/W Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 PTOT TSTG TJ TAMB mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-01 RATING CHARACTERISTIC CURVES ( CHTA14Z ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=30V IC=0; VEB=10V VCE=5V IC=0.01A IC=0.1A IC=100mA; IB=0.1mA IC=100mA; VCE=5V IE=ie=0; VCB=10V; f=1MHz IC=10mA; VCE=5V; f=100MHz SYMBOL ICBO ICEO MIN. TYPE MAX. 0.1 0.1 UNITS uA uA DC Current Gain hFE 10000 20000 125 4.0 - 1.5 2.0 Volts Volts pF MHz Collector-Emitter Saturation Voltage Base-Emitter oN Voltage Collector Capacitance Transition Frequency VCEsat VBEon CC fT RATING CHARACTERISTIC CURVES ( CHTA14ZPT ) Typical Electrical Characteristics Figure 1. CC - Reverse VCB 10 100000 Figure 2. hFE - IC COMMON EMITTER VCE=5V COLLECTOR CAPACITANCE CC (pF) DC CURRENT GAIN hFE 1 0.1 10000 1000 0.3 1.0 3.0 10 30 100 1 10 COLLECTOR CURRENT IC (mA) 100 COLLECTOR-BASE REVERSE BIAS VOLTAGE VCB (V) Figure 3. VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 COMMON EMITTER IC/IB=1000 Figure 4. VBE(on) - IC 10 COMMON EMITTER VCE=5V ON VOLTAGE VBE(ON) (V) 1 10 100 1000 1 1 0.1 0.1 0.01 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) |
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